SKU:84712864100
Si Wafer (111) 2" dia x 0.279 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D0279C1R1
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (111) 2" dia x 0.279 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D0279C1R1Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 279 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Overall Length: 36
Upper Pushing Rod: 20mm Dia
05 mm (choose 1
Put the adhesive layer of the tape on top of the layer of graphene
Safety valve's open pressure: 1
Maximum Pressure 250 psig (USA) / 9
Apply a 2-3 mil wet film by brush
3mm Quartz Observation Window allows the X-Ray beam penetration
MSK-SFM-HT16 is a high throughput mixing and milling machine that has 16 tube positions with 50 ml capacity
Warning: Please choose NEVER for Screen protection and Sleep in Power& Sleep setting of your computer
The maximum pumping rate of 25 mL/hr with a 60 mL syringe
5") Detailed dimension drawing Max
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