SKU:69698468279
Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001Single crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 008 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 35 0. 4 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers
et11 / e0: 51 ~54 et11 / e0: 43 ~46
Troubleshooting Must keep air compressor on during spray
This module consists of one heating module and one alumina side plate
Mobility: (4100-4340) cm^2/V
also called L927
Hardness: 9 Mohs
Cu coated SiO2/Si Wafer (5x5 mm size)
vacuum pressure -0
Lithiophilic Li-Zn alloy modified 3D Cu foam for dendrite-free lithium metal anode
Wafer Size: 4" dia x 500 microns
Please click picture below to find more equipment for preparing solid state electrolyte
and GaAs etc
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