SKU:65512308556
Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cmSingle crystal Si, (CZ) (Prime Grade) Conductivity: P type ( B doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 525 mm Orientation: (111) 4 + 0. 5 degree off Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z
YLJ-24TS has a transparent protection shield and separate manual hydraulic pump
No warranty will be provided for damage caused by improper installation
0 mm) (Pic
24mm (for electrode and separator discs of CR24xx series)
Silicon EPI Layer:
You shall measure the furnace temperature profile for your own application before making film growth
No Change in the Solution @ 85ºC*24 Hours
Proportional–integral–derivative control (PID control) and auto-tune function
Crystal Structure
Warnings Do not overflush the water bowl/base with any kind of liquid
Size: 10mm x 10mm x 0
Orientation: (111)B +/-2 degree
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Exchange/Return Notes
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