SKU:67779999026
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01Single crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument Size: 50. 8 diameter + 0. 5 mm x 0. 28 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A
Orientation: <100> +/-1
Volume: 43L
Dip Coating: Wet solution coating such as dip coating has been the most popular method for solution-processed devices
Low thermal conductivity : 0
thermal oxide: 300 nm
5 Slurry Boat
2) 8mm ±0
01 mm) Weight 15 Lbs
Specifications Crimper
battery and super-capacitor performance test
4mm Wide Nickel Tabs for use as the Negative Terminal of Polymer Li-ion Batteries 50pcs/Box
Resistivities: 0
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