SKU:45340941304
Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1US
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1USSingle crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5 A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01
Application for SS T-Piece with 1/4 BSPP & M14 Fitting Connector - EQ-TP-14BSPP
OTF-1200X-SVN is a splittable vertical tube furnace without a processing tube for DIY a tubular reactor up to 2" and 1200oC working temperature
28mm in Nickel Tab with Adhesive Polymer Tape (9
The furnaces are selectable at 850ºC or 1100ºC or 1400°C with different output power
Growth Method: Liquid epitaxial growth
Web material
t accept the return because the defect
Conductive Graphite is used as conductive material when preparing Li-ion battery Cathode and Anode
3 mm (see photo below)
Standard materials include 316 stainless steel bodies and glands
Pumping of dust
110V AC or 220V AC selectable for universal use
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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