SKU:98249963597
SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1USSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe
Polishing: two sides side polished
Optical Transparency: > 85% @ 555nm
Tubes have been evacuated to 10-7 Torr at room temperature
The etched aluminum foil with high roughness is used as substrate (Al current collectors) for dry electrode fabrication
Package must be open inside a glove box with Argon Gas and moisture less than 2%RH
Refractive index: 2
Maximum Pressure 250 psig (USA) / 9
No graphite phase was observed in the BHC300 sample First discharge capacity ~300 mAh/g
C-plane-(0001) with 0
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Crystal purity: >99
Holds small or big syringes up to 60 mL
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