SKU:82759118688
High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000LSpecifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1 x 10 6 Dimension: 50 OD x 38 ID x 1000 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the
Twist & Turn type tube connectors allows for easy connection and disconnection of tubes
Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal )
Doping: Si doped
Reciprocating Injection Head and Drum Collector (Pic
Orientation: (100) +/- (0
and drum rotation speed
Limit: 70 centigrade
Tetragonal
2" (50mm ±0
(Note: Updated information on 5/21/2015)
Installation of Mosi2 Heating Element
Conductive type: Si N- type As-doped
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- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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