SKU:24504338544
Si wafer (100) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivities: 1-10 ohm-cm - SIBa76D05C1R1
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si wafer (100) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivities: 1-10 ohm-cm - SIBa76D05C1R1Single crystal Si, Conductivity: P type ( B doped) Resistivity: 1~10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <100> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film
Single crystal copper metallic substrate
and low thermal conductivity
Conductor type: N-type
Typical Properties for Al2O3:
1 Ohms/cm (If you would like to measure the resistivity accurately
600 - 1100°C Max
Super P carbon: 3wt%
a 20mm cutting die can be used for cutting electrode discs and the 24mm cutting dies for either electrode or separator discs
Inline Centrifugal blower (ETL Listed)
Size: 2" Dia x0
Mobility: 4470-6540 cm^2/V
Voltage: Single phase 208 - 240 VAC
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Your Si wafer (100) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivities: 1-10 ohm-cm - SIBa76D05C1R1 orders ship within 1-2 business days.
Delivery Options:
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- Fast: 2-3 business days
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