SKU:53137266676
Si wafer (100), 3 "dia x0.35 mm, 2sp, N type, As-doped, R:0.001-0.005 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si wafer (100), 3 "dia x0.35 mm, 2sp, N type, As-doped, R:0.001-0.005 ohm.cmSingle crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 35 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing
Thin Film Thickness system Thin Film Thickness / Deposition System
05 mm ( choose 1
Back surface: Optical grade polish
1 to 5 VDC
Purity: >99
Holder Material: Polypropylene
Orientation: (001) +/-1
Extinction ratio
EPD: <5000/cm^2
not supply for large quantities
in which Pyrolytic Graphite Sheet was used
06 @ 0 oC 25
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