SKU:11292784425
Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cmSingle crystal Si Conductivity: N type ( P doped) Resistivity: 0. 1 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01
One order has 5 pieces of gasket
Each complete set includes three parts
Thermal Conductivity: 640
Nickel Foam for Battery Cathode Substrate (300mm length x 80mm width x 0
Operation Demo Video
and milling sintered ceramic samples up to 0
Fully breaks larger material to even sample size
Option of Vacuum Hot-plate
Skyllas-Kazacos
Windows XP
Crystal Prefection
D) outer and inner furnace tubes
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