SKU:89658760605
VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 625mm Polishing: one side polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 2. 2) x 10^19 cm^3 Mobility: 64 75 cm^2 V. S EPD: <5000 cm^2 resistivity: (4. 5 6. 7)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Tensile StrengthLengthwise
Laser Mark: none
For preparing Li-ion battery electrode material and conducting material
Thickness: 430um +/- 15 um
Contact your health and safety department manager for detailed material handling instruction
and is distinguished by its short radiation length ( 0
Diameter: 2" +/- 0
Coefficient of Linear Thermal Expansion (x10^-6/K)
vacuum-sealed in a plastic bag
Polish one-side polished
Color: colorless
Structure: Cubic
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