SKU:55173899315

VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm

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Regular price $337.56 USD
Regular price $365.56 USD Sale price $337.56 USD
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100 mm dia x 500 microns Surface Polishing: One side polished Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 327 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 98 10. 0) x10^16 c. c Mobility: 897 2070 cm^2 Vs EPD: <500 cm^2 Ra(Average

Size:         5x5x 1

and wetting

They are widely used in the final steps of the pouch cell battery pilot-scale production line to ensure a smooth

67) x10^18 /c

EPD ( / cm^2)                                          < 200

150cmE2/Vs

3 ) to apply pressure by clicking pics below

Surface finish (RMS or Ra): < 15A

NOTE: Internal components require frequent replacement (due to acidic reactions)

006% aluminum 0

8 MPa (Air Compressor is not included

Timer 0 to 5 minutes adjustable

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