SKU:55173899315
VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100 mm dia x 500 microns Surface Polishing: One side polished Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 327 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 98 10. 0) x10^16 c. c Mobility: 897 2070 cm^2 Vs EPD: <500 cm^2 Ra(Average
Size: 5x5x 1
and wetting
They are widely used in the final steps of the pouch cell battery pilot-scale production line to ensure a smooth
67) x10^18 /c
EPD ( / cm^2) < 200
150cmE2/Vs
3 ) to apply pressure by clicking pics below
Surface finish (RMS or Ra): < 15A
NOTE: Internal components require frequent replacement (due to acidic reactions)
006% aluminum 0
8 MPa (Air Compressor is not included
Timer 0 to 5 minutes adjustable
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