SKU:74180281279

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

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Regular price $357.86 USD
Regular price $379.86 USD Sale price $357.86 USD
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20

Description

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 303Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 07 2. 89) x10^16 c. c Mobility: 1690 2070 cm^2

It reduces gaseous impurities to sub-ppm levels at room temperature operation

please purchase separately

Specifications Cap Cap without Built-in PTC Thermistor

Pressure Vessel

3630                   2

¼ DIN instrument

Note: 110V power cord was included for immediate use

Surface finish (RMS or Ra) :   < 5A

Transparent (sometimes slightly brown based on annealing condition)

Please click Pic

Secondary Flat: US(2-1-1)

D (or Ø50mm x 50mm)

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Exchange/Return Notes
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