SKU:74180281279
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 303Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 07 2. 89) x10^16 c. c Mobility: 1690 2070 cm^2
It reduces gaseous impurities to sub-ppm levels at room temperature operation
please purchase separately
Specifications Cap Cap without Built-in PTC Thermistor
Pressure Vessel
3630 2
¼ DIN instrument
Note: 110V power cord was included for immediate use
Surface finish (RMS or Ra) : < 5A
Transparent (sometimes slightly brown based on annealing condition)
Please click Pic
Secondary Flat: US(2-1-1)
D (or Ø50mm x 50mm)
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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