SKU:63635943242

InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished

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Regular price $948.75 USD
Regular price $978.75 USD Sale price $948.75 USD
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Ships within 48 hours · Estimated delivery Jul 11 - Jul 16

Description

InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: two sides polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (2 6)E17 cc @77K Mobility (cm^2 Vs) (@77K): 3. 9E 4 EPD ( cm^2) < 200

EPD: unable to measure due to (111)A orientation

Bow                                <5 microns

Single crystal data may slight different from the standard due to lattice deformation)

Stainless Steel

must have Grounding tests(GFCI) before first-time use

71 Array (Capacity):   13*20=250

Carrier Concentration                             <3E16 / cm3

0 Appearance Dark brown powder

It proves inert  for carbon and refractory metals in many severe situations

This allows downloading data for further analysis

Input Power 208 - 240V AC single-phase (50/60Hz)

Put the tape and the sample on the very middle of the vacuum chuck

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