SKU:63635943242
InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished
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- USA
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Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: two sides polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (2 6)E17 cc @77K Mobility (cm^2 Vs) (@77K): 3. 9E 4 EPD ( cm^2) < 200
EPD: unable to measure due to (111)A orientation
Bow <5 microns
Single crystal data may slight different from the standard due to lattice deformation)
Stainless Steel
must have Grounding tests(GFCI) before first-time use
71 Array (Capacity): 13*20=250
Carrier Concentration <3E16 / cm3
0 Appearance Dark brown powder
It proves inert for carbon and refractory metals in many severe situations
This allows downloading data for further analysis
Input Power 208 - 240V AC single-phase (50/60Hz)
Put the tape and the sample on the very middle of the vacuum chuck
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