SKU:56717611673
LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2
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- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5
especially: Pumping of corrosive or explosive media
Polish: One side optical polished
48"x40"x40" Compliance CE Certified Warranty The pressing machine was quality inspected in the USA
The probe module is shown in Pic
Wafer size: 10 mm x 5 mm x 0
m 80mm 120m 2~2
Thermal conductivity: 10-20 w/m
4160 2
Feeding rate
which provides the heavy-duty structure for vacuum
The fully diamond sintered blade is suitable for low speed cutting ( under 3000 RPM) of oxide single crystals or any brittle crystal
Please use an anti-corrosion coolant during cutting to avoid rusting the lead screw
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