SKU:34047496742
InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1USInP single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (0. 87 1. 19)x10^ 3 ohm. cm Mobility: 1400 1670 cmE2 V. S EPD: N A Carrier Concentration: (3. 15 5. 15) x10^18 cm^3 Surface Roughness: <4 nm EPI ready surface and packing
3) is included to set various working modes for measuring the capacity and lifecycle of all types of rechargeable batteries
Material Feed Size
please picture below
5" Alumina or quartz tube as well
0197 kg/cm^2
at puls moment
Brand new laptop with MS Window 10
made of 304 stainless steel with sealing O-ring
equipped with a needle valve and a ball valve
As for 260 mm cathode substrate
5 for details)
5" Arbor for cutting nonferrous metal materials
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