SKU:50176127850
InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1spInP single crystal wafer Orientation: (111)A Size: 2" diameter x 0. 35mm Doping: undoped Conducting type: N Type, Semi Conducting Resistivity: (2. 84 3. 78)E^ 1 ohm. cm Carrier Concentration:(4. 04 5. 62)E15 c. c. Mobility: 3910 4230 cm^2 v. s. Polish: one side polished Ra(Average Roughness) : < 0. 4 nm EPD: unable to measure due to (111)A orientation EPI ready surface and packing
(+/-05o) with Standard Flat
Polishing: Two sides CMP polished with free sub-surface damage
30 segments programmable for heating rate
and CR2016 is included
graphene film thickness varis from 1 - 10 layer carbon
5 mm) Length 790 mm (31
5 psi ) adjustable
Orientation: (001)
ID: 70 mm
1500 ~ 2000
Height: 1/2"
Wafer Size: 5x5x0
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Your InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp orders ship within 1-2 business days.
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- Fast: 2-3 business days
- Express: 1-2 business days
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