SKU:25870163059
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm
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- USA
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cmSingle crystal Si Conductivity: P type ( B doped) Resistivity: >200 ohm cm Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 1. 0 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Active Material Proportion in Powder: 94%
Nominal GaN Thickness: 15 um +/- 10 %
Hardness: 5
110VAC or 208 - 240 VAC
10 pcs per package for minimum order
> 35N/15mm
Speed: RPM: 2480
please click pictures 3-4 below)
135ºC/ 3 Seconds/ 0
MTI does not accept international orders due to restrictions on hazard material exportation
Density: 5
Working Voltage Input: AC 110V - 240V single phase 50/60 Hz
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