InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polishedInSb substrate 10x10x0. 5 mm (N type, undoped) Size: 10x10x0. 5 mm Orientation <100> + 0. 5o Polishing: one side side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Undoped Conductivity type N type Carrier Concentration <1E15 @77K Mobility (5. 0 3. 5)E5 cm2 Vs EPD <200 cm 2

Packing:                 in 1000 class clean room with wafer container

AB520Y is active carbon powders with extra high surface areas for preparing electrodes of a supercapacitor

Warranty One Year limited warranty with lifetime support (except for consumable O-rings) Operation  Demo Video

Dimension:  1" x 3" x 1

( +-05o) with Standard Flat

( Ultralsonic processor )                    ( Vacuum box )

155 MPa Material Stainless Steel 316

Melting Point:                   937

There is ~200nm AlN buffer layer between the silicon and GaN

which provides the heavy-duty structure for vacuum

The alumina fiber separate bar is able to sustain under1800C to seperate heating elements in GSL-1800 series

Sellenmeyer equation:                                        ho2 -1 =3