SKU:17086628340
InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US2" InSb wafer (N type, undoped) Size: 2" dia x 0. 5mm thick Orientation <111>B + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)B + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration 5E13 3E14 @77K Mobility >400000 cm^2 V. s EPD <500 cm^ 2
returnable or exchangeable
Application case
Ionic Conductivity
Orientation C (0001) +/- 1
Battery Research Equipment Other Battery Powder
It comes with the specifications as the following:
Package: sold in 20 pcs per box
Slit width: 7mm
A vacuum gauge is built in for easy monitoring of the vacuum level
Surface roughness < 15A
Consumable parts
The working temperature of the flange set is 250°C
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
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