SKU:92628772035
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm
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- USA
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- USA
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: One side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Conductor type: N type Resistivity: 0. 088 0. 183 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: (0. 78 3. 02)x10^16 c. c Mobility: 2350 3010 cm^2. v.
Folding Length:200mm
Tolerance of size
additional cost ($1800) will apply
25) 10mm ±0
The process is simple
The mortar is octagonal and the pestle is cylindrical with 3/4" in diameter and 3 7/8" in length
For milling the oxide material
There are 5 sheets in a package bag
MTI would like to extend our special thanks to Dr
5 Gallons Tank Material Steel Tank Style Hot Dog Air Compressor Type Oil Free
Crystal: MgF2
The fully diamond sintered blade is suitable for low speed cutting ( under 3000 RPM) of oxide single crystals or any brittle crystal
Quick Dispatch:
Your VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
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- Final sale items are not eligible for returns or exchanges.
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