SKU:63236860820
VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 400 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Carrier Concentration: (0. 64 6. 67) x10^18 c. c EPD: <500 cm Resistivity: 0. 0038 0. 0158 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 10x10x 0
44" (62mm) Inside Diameter 1
Aluminum Oxide Substrates Al2O3
Packing: The substrate is packed with a 100-grade clean plastic bag under 1000 class cleanroom
Click here to choose a crucible
Coating Thickness: 88um +/- 10um (double side coated)
300-500A thick Platinum coating inside case by plasma sputtering coater
MSK-112A-C is a manual winder for winding electrodes with separators together in the research of Li-ion cylinder batteries
This is an excellent tool to make higher-quality film for tape casting
Size: 5x5 x 0
Aluminum Nitride Substrates: AlN
propane and natural gas applications
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