SKU:61167318298
Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US53" dia. InP InGaAs InP layers on InP (100) by MOCVD deposition Substrate: N type S doped InP [100]0. 5, Nc=~5E18 cc Wafer Size: 3" diameter Thickness: 650+ 25um One side polished, backside etched, US Flats EPI Layer 1: 1um thick InP film, n type Si doped, Nc=~5E15 cc EPI Layer 2: 3. 00. 5m thick, lattice matched In0. 53Ga0. 47As film, n type undoped, Nc=1E15 1E16 cc EPI Layer 3(top): 1um thick InP film, n type Si doped, Nc=1E15 1E16 cc
Dark brown powder
Tungsten (W)
In order to get longer tube service life
Doping: Zn-doped
Conductor type: N-type
12)E-2 ohm
Epitaxial FWHM
Customized length (up to 120 mm) is available upon request
4-Pin Electrical Feedthrough with KF-25 Clamp is used to transferred electrical currents and signals into DZF Oven in a vacuum
Dielectric constants
Surface Roughness: < 5 A
Orientaion: A plane <11-20> ori
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