SKU:53233504640
LaAlO3, (100) Ori. EPI polishing 2" x 0.5mm wafer 2 SP - LAOa50D05C2 --- Qty discounted!
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Ships within 48 hours · Estimated delivery Jul 11 - Jul 16
Description
LaAlO3, (100) Ori. EPI polishing 2" x 0.5mm wafer 2 SP - LAOa50D05C2 --- Qty discounted!LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 2" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +
8%) for l = 633 nm
Working Voltage 110VAC
193) 2 )
Limit: 70 centigrade
one KF25 vacuum port
Surface roughness: < 5A
and twins If your application is very sensitive to the defects
Operation type: continuous and timed operation (Attention: Considering the best interest of the service life of the motor & gearbox
and area desnity for double side is 27 mg/cm2
atmospheric stability Elements Proportions Ni:Co:Mn = 1:1:1 Ni+Co+Mn (%) 60
Syringe purge mode
220V +/-10% Single Phase configuration is available at extra cost (>300W transformer is needed)
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