SKU:20556131415
Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cmNickel Metallic Film Nickel Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Roughness, RMS: N A Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click
8Normal0 Aiming to replace of the traditional PVDF binder
Nobody can promise each substrate has no defect such as domain
Resistivity: 1015 W
Orientation: (001) +/-0
Total Thickness: ~80 um (double-side coated)
74 dB @ 200 mm distance
3mm Width Nickel Tab as Negative Terminal for Polymer Li-ion Battery
the thickness can be determined to a high resolution of sub-Angstrom (0
4 mm +/- 0
Polishing: One side CMP polished with free sub-surface damage
polymer Li-Ion battery made by heated sealer make pouch cell
single-phase
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