Si Wafer (110) 2" dia x 0.5 mm t, 2SP, P type, B doped, R:8-12 ohm-cm

Si Wafer (110) 2" dia x 0.5 mm t, 2SP, P type, B doped, R:8-12 ohm-cmSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 8 12 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner

the glove box can be vacuumed by a mechanical pump up to 0

Low defect densities

GSL-1350X-ISE is a temperature-controlled thermal evaporator designed for In-situ evaporating most metallic and organic materials up to 1350 ºC

loosen the knob all the way until the spring compression is no longer stressed

Surface roughness: Ra < 5 A

Stroke 40 mm Max

Polishing : Silicon face polished

please choose coarse (63 microns ) diamond blade at related product below

Please click the chemical formula below to link to the substrates available

Click the video below to see the battery cathode coated by MTI's Film coater MSK-AFA-II-VC

One 3" I

Over-temperature and thermal couple broken protection